
Job Information
Global Foundries Technology Development Integration Engineer, Power GaN (2025 New College Graduate) - JR-2500135-5859 in Essex Junction, Vermont
This job was posted by https://www.vermontjoblink.com : For more information, please see: https://www.vermontjoblink.com/jobs/1243918 About GlobalFoundries
GlobalFoundries (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world\'s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.
New College Graduates Overview:
We offer many full-time employment paths for recent graduates, which provide accelerated training in a fast-paced work environment, cross-functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life-long connections and skills.
Summary of Role:
We are seeking highly motivated employees with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). New hires will immediately embed within our project teams of process, integration, and device engineers in developing new process flows and devices in Power GaN technologies, targeting new market applications.
Essential Responsibilities include:
- Initial and primary responsibilities include enabling performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation.
- Expectations are to lead and drive interactions with various organizations in fab manufacturing and other support organizations to facilitate and achieve program success.
- Innovate with integration and device team members in driving the integration of advanced process modules to be used in the technology to meet performance, reliability, yield, and cost objectives.
- Interact with various colleagues in the broader fab teams that support technology development work, including test/characterization, failure analysis, unit process, reliability, manufacturing, and other research organizations, to facilitate and achieve program success.
- Support technology development qualification milestones from conception through manufacturing installation.
- Support experimental design and execution.
- Analyze experimental and performance results, including constructional analysis, and inline measurement summarization for manufacturing capability assessments and defect level assessments.
Other Responsibilities:
- Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
Required Qualifications:
- Education - Graduating with A Bachelor\'s, Master\'s, or PhD Degree in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science or related field from an accredited degree program.
- Must have at least an overall 3.0 GPA and proven good academic standing.
- Language Fluency - English (Written & Verbal)
- Knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing.
- Physical Capacity Demands - some amount of time required to work in a manufacturing clean room, with product handling.
- Proficiency in MS Office and Statistical Analysis including Cpk, Design of Experiments.
Preferred Qualifications:
- Master\'s or PhD in Engineering, Materials Science, Solid State Physics or other relevant engineering or physical science discipline.
- Pri r related internship or co-op experience.
- Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
- Project management skills, i.e. the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
- Strong written and verbal communication skills
- Strong planning & organizational skills
- Educational experience in modern device physics (FET, BJT, LDMOS, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
- Experience in semiconductor processing, with experience in GaN technology and applications desired.
- Excellent interpersonal skills, energetic,motivated,andself-driven
- Demonstrateability to work well within a global matrixed team or environmentwith minimal supervision
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Expected Salary Range
\$65,400.00 - \$145,800.00
The exact Salary will be determined based on qualifications, experience and location.
If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and yo